1 June 1990 New phase-shifting mask with highly transparent SiO2 phase shifters
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Abstract
A phase-shifting mask enables subhalf-micron optical lithography. We propose a new phase-shifting mask with Si02 phase shifters. Si02 phase shifters on a quartz mask substrate have the advantages of low absorption under deep UV and a lack of multiple interference. Si02 phase shifters were fabricated by lift-off of the evaporated Si02 film. The new phaseshifting mask is highly transparent to deep UV and provides a 2 uniformity of phase shift over the full exposure field of a 5X stepper. Improved resolution of 0. 25 im lines and spaces was achieved by using a KrF excimer laser stepper and the new phase shifting mask. We also characterize the image profile projected with a phase-shifting mask because the reproducibility of mask features on a wafer declines when a phase-shifting mask is used. We indicate the importance of the interference between the main and side lobes of diffraction patterns for individual apertures and clarify the mechanism ofreproducibility degradation in optical lithography using a phase-shifting mask. 1.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Isamu Hanyu, Isamu Hanyu, Satoru Asai, Satoru Asai, Kinjiro Kosemura, Kinjiro Kosemura, Hiroshi Ito, Hiroshi Ito, Mitsuji Nunokawa, Mitsuji Nunokawa, Masayuki Abe, Masayuki Abe, } "New phase-shifting mask with highly transparent SiO2 phase shifters", Proc. SPIE 1264, Optical/Laser Microlithography III, (1 June 1990); doi: 10.1117/12.20187; https://doi.org/10.1117/12.20187
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