Presentation + Paper
5 October 2023 Precise control of threshold voltage in ultra-thin quasi-2D oxide semiconductor-based transistors
Robert Tseng, Der-Hsien Lien
Author Affiliations +
Abstract
In recent years, ultra-thin quasi-2D (<4nm) oxide semiconductor (OS)-based transistors are promising for future high performance electronic and photoelectronic. For such applications, precise tuning of doping concentration of semiconductor with a wide tunable window is of critical importance. However, in practical electronic circuits is limited by the relative lack of doping modulation with fine control over wide bandwidths. Here, the doping concentration of ultra-thin OS transistor is precisely tuned over a range, corresponding to a shift of threshold voltage change of more than 10 V using thermal annealing combined with laser illumination. Due to the strong surface effect, the ultra-thin OS would be highly sensitive to ambient atmosphere. The gas absorption process makes us could dramatically change the carrier concentration of OS by introducing laser to the system. This work highlights the importance of tunable threshold voltage and the mechanism of the transition process. The tunability of doping concentration in ultra-thin OS-based transistors opens up a new path toward high performance logic circuits and other practical applications.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert Tseng and Der-Hsien Lien "Precise control of threshold voltage in ultra-thin quasi-2D oxide semiconductor-based transistors", Proc. SPIE 12651, Low-Dimensional Materials and Devices 2023, 1265106 (5 October 2023); https://doi.org/10.1117/12.2677344
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KEYWORDS
Transistors

Doping

Oxides

Semiconductors

Annealing

Light sources and illumination

Modulation

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