1 August 1990 Application of picosecond optoelectronic semiconductor switching
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Proceedings Volume 1268, Applications of Ultrashort Laser Pulses in Science and Technology; (1990) https://doi.org/10.1117/12.20330
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands
Abstract
We have used the picosecond optoelectronic switching technique to study carrier recombination times and mobilities at different conditions in semiconductors. Recombination times were measured by correlation technique, e.g. linear and non'inear recombination rates. The photoconductivitv method was also used to measure the dependence of the carrier mobility on the applied field strength in GaAs The mobility was determined from the slope of the v(E curve. Using this technique we were able to distinguish between the carrier mobilities in GaAs in different valleys of the conduction band at different preparation conditions. The PS optoelectronic switching technique was also used to measure the response of a fast Dhotodiode of a 6 8Hz transistor and the dispersion of a ps electrical pulse 1on a cable.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harald Bergner, Volkmar Brueckner, Matthias Lenzner, Reiner Strobel, "Application of picosecond optoelectronic semiconductor switching", Proc. SPIE 1268, Applications of Ultrashort Laser Pulses in Science and Technology, (1 August 1990); doi: 10.1117/12.20330; https://doi.org/10.1117/12.20330
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