1 August 1990 Subnanosecond risetime high power pulse generation using photoconductive bulk GaAs devices
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Proceedings Volume 1268, Applications of Ultrashort Laser Pulses in Science and Technology; (1990) https://doi.org/10.1117/12.20331
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands
Abstract
The interest in fast risetime, high power photoconductive devices stems from several potential applications including pulse, impulse, and high power microwave generation [1, 2]. As the voltage becomes large and the switching speed becomes extremely fast, the generation of high power electrical pulses using photoconductive devices becomes very complicated because of effects such as surface flash-over, stray inductance, stray capacitance, and abrupt impedance transitions. Two ap- proaches were taken to produce maximum output voltage amplitude without degradation in switch risetime. A coaxial transmission line with a switch holder filled with a high dielectric strength liquid was fabricated for long pulsewidths ( 2 ns) . For the narrow pulsewidths ( 2 ns) a quasi-radial transmission line was fabricated. By incorporating a photoconductive bulk GaAs device with opposite gridded elec- trodes into these specially designed energy storage elements, and illuminating the switch with a mode-locked Nd:YAG laser, electrical pulses with risetimes of several picoseconds have been realized.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. H. Kim, A. H. Kim, Maurice Weiner, Maurice Weiner, Robert J. Youmans, Robert J. Youmans, Robert J. Zeto, Robert J. Zeto, } "Subnanosecond risetime high power pulse generation using photoconductive bulk GaAs devices", Proc. SPIE 1268, Applications of Ultrashort Laser Pulses in Science and Technology, (1 August 1990); doi: 10.1117/12.20331; https://doi.org/10.1117/12.20331
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