1 August 1990 Ultrafast relaxation dynamics of photoexcited carriers in GaAs
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Proceedings Volume 1268, Applications of Ultrashort Laser Pulses in Science and Technology; (1990) https://doi.org/10.1117/12.20327
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands
Abstract
We report time-resolved pump-probe measurements of both absorption and refractive index for GaAs thin films with 80 fs time resolution. The probe photon energies are near the band-edge and near the initial excited states, and photoexcited carrier densities are varied from 1017 to 1019 cm3. Our results reveal the instantaneous band gap renormalization and the importance of carrier-carrier scattering and intervalley scattering. Mechanisms which cause an ultrafast change in refractive index are also discussed.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ting Gong, William L. Nighan, and Philippe M. Fauchet "Ultrafast relaxation dynamics of photoexcited carriers in GaAs", Proc. SPIE 1268, Applications of Ultrashort Laser Pulses in Science and Technology, (1 August 1990); doi: 10.1117/12.20327; https://doi.org/10.1117/12.20327
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