How to use terahertz emission spectroscopy for wide bandgap semiconductor evaluation

Masayoshi Tonouchi

doi:10.1117/12.2681961

4 October 2023 How to use terahertz emission spectroscopy for wide bandgap semiconductor evaluation

Masayoshi Tonouchi

Proceedings Volume 12683, Terahertz Emitters, Receivers, and Applications XIV; 1268303 (2023) https://doi.org/10.1117/12.2681961
Event: SPIE Optical Engineering + Applications, 2023, San Diego, California, United States

Abstract

The time-domain waveforms of terahertz (THz) emission spectroscopy (TES) can tell us the ultrafast nature of the material photoresponse, and TES is becoming an essential tool to explore the advanced material functionalities and disclose the dynamics of the photocarriers. However, universal applications can not be reached without understanding physics in more detail over the broad dimensional range in the time-domain. We have applied TES and LTEM to Si-based materials and devices and proven that one can estimate various parameters, such as surface potential, work function, impurity doping density, defects density in passivation layers, surface state density, and so on, semi-quantitatively and non-contactly by just observing the THz radiation. In the present work, we review the TES application to wide bandgap semiconductors.

Conference Presentation

(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Masayoshi Tonouchi "How to use terahertz emission spectroscopy for wide bandgap semiconductor evaluation", Proc. SPIE 12683, Terahertz Emitters, Receivers, and Applications XIV, 1268303 (4 October 2023); https://doi.org/10.1117/12.2681961

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