Poster + Paper
3 October 2023 Effect of the metal nature on the I-V characteristics of CdTe diodes for ionizing radiation detectors
Valeriy Sklyarchuk, Volodymyr Gnatyuk, Toru Aoki
Author Affiliations +
Conference Poster
Abstract
The electrical characteristics of CdTe-based surface barrier structures, which can be used as spectroscopic X/γ-ray detectors, have been investigated. The metal-semiconductor structures were obtained by thermal (resistive) vacuum deposition of various metals onto detector-grade CdTe crystals. Metals with different work functions, such as Al, In, Ni, Ti, Cr, and Au, were employed as electrode materials for rectifying contacts. An ohmic contact was created on the entire opposite surface of the crystals by chemical deposition of Au from a gold chloride solution. The surface processing of CdTe crystals before the formation of both rectifying and ohmic contacts included mechanical and chemical polishing, as well as Ar-ion bombardment. Dark currents at reverse voltage of 1500 V did not exceed 4 nA for all the diodes except for the Au/CdTe/Au structure. The effect of the metal nature on the I-V characteristics and charge carrier transport mechanisms was studied, and the features of voltage dependences of dark current were explained by differences in the work functions of the metals, as well as the contact deposition technique.
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Valeriy Sklyarchuk, Volodymyr Gnatyuk, and Toru Aoki "Effect of the metal nature on the I-V characteristics of CdTe diodes for ionizing radiation detectors", Proc. SPIE 12696, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXV, 126960L (3 October 2023); https://doi.org/10.1117/12.2676538
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KEYWORDS
Metals

Crystals

Gold

Semiconductors

Chromium

Nickel

Diodes

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