Characterization of optical thin films for applications at 10.6 um

Martin Kaspar; R. Pfefferkorn; Juergen Ramm

doi:10.1117/12.20369

1 August 1990 Characterization of optical thin films for applications at 10.6 μm

Martin Kaspar, R. Pfefferkorn, Juergen Ramm

Proceedings Volume 1270, Optical Thin Films and Applications; (1990) https://doi.org/10.1117/12.20369
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands

Abstract

Electron beam evaporation and ion assisted deposition have been used to prepare BaF2, LaF3 and HoF3 single layers. These fluorides were chosen as low index materials for laser applications at 10.6 Lm. The films were characterized by Rutherford backscattering (RBS), x-ray diffraction, scanning electron microscopy (SEM), stress measurement, laser calorimetry, and spectrophotometry. The influence of substrate temperature, deposition rate, ion energy, and ion to molecule arrival ratio on film growth was analysed and related to the optical properties. Although each material reacts differently to the deposition parameters, ion assisted deposition leads to an increase of the absorption loss at the laser wavelength for all three materials.

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Martin Kaspar, R. Pfefferkorn, and Juergen Ramm "Characterization of optical thin films for applications at 10.6 μm", Proc. SPIE 1270, Optical Thin Films and Applications, (1 August 1990); https://doi.org/10.1117/12.20369

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