1 August 1990 Large-area IAD with a new plasma source
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Proceedings Volume 1270, Optical Thin Films and Applications; (1990) https://doi.org/10.1117/12.20377
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands
Abstract
Ion assisted deposition (lAD) is a well known technique to iniproye the properties of thin films. A wide range of materials and conipleted layer systems have already been investigated by many laboratories. One disadvantage of this technology is the small useful substrate area compared to conventional thermal evaporation. This is due to the limited ion beam size of the available ion sources. Therefore we have developed a new plasma source which is able to irradiate a substrate holder of 800 mm diameter with high plasma current density. The principle of operation and some details of the plasma source are described. The experiments were done in a conventional coating system. The plasma source has been operated at up to 90 V discharge voltage and up to 80 A discharge current. Up to now we have deposited some single layers with dielectric materials. For TiO2 we have achieved an refractive index of 2.55 at 550 nm.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alfons Zoeller, Rainer Goetzelmann, Reinhard Herrmann, K. Matl, "Large-area IAD with a new plasma source", Proc. SPIE 1270, Optical Thin Films and Applications, (1 August 1990); doi: 10.1117/12.20377; https://doi.org/10.1117/12.20377
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