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1 August 1990 Optical properties of SnOx thin films: experimental data and theoretical model
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Proceedings Volume 1272, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion IX; (1990) https://doi.org/10.1117/12.20429
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands
Abstract
Snox films were made by reactive ifmagnetron sputtering of Sn in Ar + onto unheated glass. Electrical dc resistivity (Pdc) and spectral optical properties were measured as a function of sputtering parameters. A sharp minimum in Pdc was found at a well-defined gas mixture. Optimized deposition parameters gave films with Pdc 3 x iO c2 cmat low sputter rate (r) and Pdc 102 ç cm at r -3 nm/s. The luminous transmittance was -75 %. The optical and electrical properties could be quantitatively reconciled with a theoretical model for wide-bandgap semiconductors, heavily n-doped by doubly ionized oxygen vacancies, that accounted for ionized impurity scattering of the free electrons.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. A. Stjerna and Claes-Goeran Granqvist "Optical properties of SnOx thin films: experimental data and theoretical model", Proc. SPIE 1272, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion IX, (1 August 1990); https://doi.org/10.1117/12.20429
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