Characterization of an ADP electro-optic modulator in the near-IR

Indu F. Saxena; Roy B. Torbert; James C. Vandiver

doi:10.1117/12.20510

1 August 1990 Characterization of an ADP electro-optic modulator in the near-IR

Indu F. Saxena, Roy B. Torbert, James C. Vandiver

Proceedings Volume 1274, Electro-Optic and Magneto-Optic Materials II; (1990) https://doi.org/10.1117/12.20510
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands

Abstract

Electro-optic modulators (EOM's) can be used for polarization modulation of light at frequencies up to hundreds of megahertz and are therefore strong candidates for high speed effipsometer systems. The characteristic of this device is the half wave voltage, V ,which is a function of the wavelength of light and the temperature. A description of the particular ADP EOM we are using, and a discussion of the effect of laser linewidth and temperature on the measurement of V,, is presented. For the laser diode wavelength of )t = 830 nm, V, and the extinction ratio are measured at different temperatures.

Citation Download Citation

Indu F. Saxena, Roy B. Torbert, and James C. Vandiver "Characterization of an ADP electro-optic modulator in the near-IR", Proc. SPIE 1274, Electro-Optic and Magneto-Optic Materials II, (1 August 1990); https://doi.org/10.1117/12.20510

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