1 August 1990 Boron-doped diamond films on silicon studied by Raman and infrared spectroscopies
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Proceedings Volume 1275, Hard Materials in Optics; (1990) https://doi.org/10.1117/12.20513
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands
Abstract
Boron doped diamond films were deposited onto (100) orientated Si substrates using a thermal filament CVD method. Boron trioxide was used as a doping source and samples with boron to carbon (B/C) ratios of 0, 10, 100, and 1000 ppm were prepared for the optical measurements. The infrared (IR) results reveal the formation of an ultrathin SiC layer at the interface between Si and diamond. Furthermore, the IR data confirm the resistivity data obtained from electrical measurements. Raman spectroscopy was used to probe the quality and homogeneity of the diamond films. Upon increasing B/C ratio the diamond phonon line shifts to lower frequency and is also broadened revealing a softening of the diamond. In addition, the optical absorption was found to increase strongly with increasing B/c ratio.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ken Okano, Ken Okano, Tateki Kurosu, Tateki Kurosu, Masamori Iida, Masamori Iida, Thomas Eickhoff, Thomas Eickhoff, Hans Wilhelm, Hans Wilhelm, Dietrich R. T. Zahn, Dietrich R. T. Zahn, } "Boron-doped diamond films on silicon studied by Raman and infrared spectroscopies", Proc. SPIE 1275, Hard Materials in Optics, (1 August 1990); doi: 10.1117/12.20513; https://doi.org/10.1117/12.20513
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