1 August 1990 Reactive low-voltage ion plating of hard silicon nitride optical thin films and their characterization
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Proceedings Volume 1275, Hard Materials in Optics; (1990) https://doi.org/10.1117/12.20521
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands
Abstract
Silicon nitride films were synthesized in a Balzers BAP 800 coating plant by an plasma enhanced evaporation process. Transparent, stoichiometric films free of hydrogen, oxygen, argon, and heavy metals were obtained. The optical properties, the chemical composition, the microhardness, the structure, and the morphology of the films were investigated.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Juergen Ramm, Juergen Ramm, Ralf Hora, Ralf Hora, Bertrand G. Bovard, Bertrand G. Bovard, } "Reactive low-voltage ion plating of hard silicon nitride optical thin films and their characterization", Proc. SPIE 1275, Hard Materials in Optics, (1 August 1990); doi: 10.1117/12.20521; https://doi.org/10.1117/12.20521
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