Paper
28 November 2023 A wavelength tunable and integrated ultra-narrow linewidth DBR semiconductor lasers
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Abstract
We proposed an integrated semiconductor laser scheme that combines an ultra-high Q silicon nitride microresonator with a DBR semiconductor laser, resulting in a tunable ultra-narrow linewidth laser. The experiment achieves tuning within the wavelength range of 1554.2-1557.15nm (about 370GHz), being almost ten times larger than that of reported DFB scheme. Moreover, the sidemode suppression ratio is low to 52dB with a ultra-narrow linewidth about 6.6kHz. It needs the joint adjustment of DBR operating current, coupling of the high-Q silicon nitride external cavity. These results can be applied in fields such as dense wavelength division multiplexing systems and integration LiDAR System.
(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Yilu Wu, Xin Zhang, Qingsong Bai, Yuqi Hu, Wei Xiong, Guangqiong Xia, Dan Lu, Zhengmao Wu, and Jiagui Wu "A wavelength tunable and integrated ultra-narrow linewidth DBR semiconductor lasers", Proc. SPIE 12764, Optoelectronic Devices and Integration XII, 1276404 (28 November 2023); https://doi.org/10.1117/12.2688968
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KEYWORDS
Semiconductor lasers

Tunable lasers

Silicon

Microresonators

Silicon nitride

Microrings

Distributed feedback semiconductor lasers

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