Deposition of thin films by high-energy excimer laser ablation

K. Schmatjko; B. Roas; G. Endres; L. Schultz

doi:10.1117/12.20629

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1 August 1990 Deposition of thin films by high-energy excimer laser ablation

K. Schmatjko, B. Roas, G. Endres, L. Schultz

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Proceedings Volume 1279, Laser-Assisted Processing II; (1990) https://doi.org/10.1117/12.20629
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands

Abstract

The laser deposition of textured thin films was investigated for different degrees of crystal complexity. At the target high laser pulse energy density in a homogeneously illuminated spot is required throughout for stoichiometric material transfer to the substrate. The epitaxial growth is controlled by the substrate terrrperature within a narrow range; the simple MgO structure does not need a crystalline substrate. Fragments volatile in the ablation process may be supplied from the background gas, as oxygen for YBaCuO. Some applications will require large area deposition. This has been accomplished by greater target-to-substrate distance without film deterioration, and by translational motion through the plasma cone.

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K. Schmatjko, B. Roas, G. Endres, and L. Schultz "Deposition of thin films by high-energy excimer laser ablation", Proc. SPIE 1279, Laser-Assisted Processing II, (1 August 1990); https://doi.org/10.1117/12.20629

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