1 August 1990 Formation of nickel silicides by excimer laser CVD of Ni(CO)4
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Proceedings Volume 1279, Laser-Assisted Processing II; (1990) https://doi.org/10.1117/12.20632
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands
Nickel silicides have been grown on single crystal silicon sub- strates. A XeCl excimer laser was used for all process steps: substrate cleaning, nickel deposition , silicide formation and annealing. The nickel films were grown by photodecoxnposition of Ni(CO)4 adsorbate layers with an excess of CO to prevent homogeneous nucleation and hence the formation of dust. The samples were analysed by X-ray fluorescence, SIMS and RBS. The results indicate that epitaxial silicide layers with a thickness of 50 ma can be obtained after careful choice of laser fluence and Ni film thickness. In an alternative approach we used a molecular beam of Ni(CO)4, part of which is laser excited prior to impinging on the substrate. This allows the combination of CVD and conventional MBE techniques. In this experiment we also investigate the interaction of photofragments with substrate surfaces and other processes responsible for material deposition.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. Borsella, E. Borsella, Karl Ludwig Kompa, Karl Ludwig Kompa, H. Reiner, H. Reiner, Hartmut Schroeder, Hartmut Schroeder, } "Formation of nickel silicides by excimer laser CVD of Ni(CO)4", Proc. SPIE 1279, Laser-Assisted Processing II, (1 August 1990); doi: 10.1117/12.20632; https://doi.org/10.1117/12.20632


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