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1 August 1990 Nitride layer formation by multipulse excimer laser irradiation of solid samples
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Proceedings Volume 1279, Laser-Assisted Processing II; (1990)
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands
We report a study of the formation of nitride surface layers on semiconductor (Si) and metal (Ti) samples by multipuise (up to 2500) XeC1 excimer laser (A=308 nm) irradiation in N2 and NH atmosphere. After irradiation the samples were examined by optical and electron microscopy (SEM) . and then analyzed by Rutherford backscattering spectroscopy (RBS) , nuclear reaction analysis (NRA) , Auger and X-ray photoelectron spectroscopy (XPS) to positively identify the formed cornpounds. The electrical characteristics of the laser synthesized nitride layers were also measured. The amount of nitride has been observed to depend on the number of subsequent laser pulses and on the nature of the ambient gas.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Emilia D'Anna, Gilberto Leggieri, Armando Luches, Maurizio Martino, Antonio Luigi Perrone, A. V. Drigo, Joseph Zemek, and Ion N. Mihailescu "Nitride layer formation by multipulse excimer laser irradiation of solid samples", Proc. SPIE 1279, Laser-Assisted Processing II, (1 August 1990);

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