1 August 1990 Surface patterning by pulsed-laser-induced transfer of metals and compounds
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Proceedings Volume 1279, Laser-Assisted Processing II; (1990) https://doi.org/10.1117/12.20631
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands
Abstract
Besults of a systematic study on Q-switched nthy laser induced rrrn2 area transfer of supported titanium and chranium thin films and Ge/Se multilayer structures are reported. The appearance of the prints is governed by film-support adhesion and source-target spacing. Best quality prints are produced by ablating well adhering ntal films in close proximity ( spacing < 15 pm) to the target to be patterned. Transfer fran stacked elenntaxy layers as a source offers a unique possibility of depositing acinpound films by mixing the constituents and transferring the material onto the target substrate in a single step.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zsolt Toth, Zsolt Toth, Peter Mogyorosi, Peter Mogyorosi, Tamas Szoerenyi, Tamas Szoerenyi, } "Surface patterning by pulsed-laser-induced transfer of metals and compounds", Proc. SPIE 1279, Laser-Assisted Processing II, (1 August 1990); doi: 10.1117/12.20631; https://doi.org/10.1117/12.20631
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