1 August 1990 All-optical switching and bistability in GaAs-based epitaxial structures
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Proceedings Volume 1280, High Speed Phenomena in Photonic Materials and Optical Bistability; (1990) https://doi.org/10.1117/12.20659
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands
Abstract
GaAs/A1GaAs epitaxial structures allow the fabrication of monolithic bistable devices with very appealing characteristics for all-optical switching applications, such aslow threshold power and good thermal stability. They rely upon the excitonic and band-gap resonant nonlinearities in bulk GaAs or MQW. Very compact devices of a few micron size with A1As/A1GaAs integrated Bragg reflectors can be grown during a single epitaxial process. We report linear and nonlinear reflectivity measurements on such a monolithic étalon with a MQW active layer grown by MOVPE. A bistability power threshold lower than 3 mW at 836 nm was observed with a reflective contrast ratio as high as 30: 1 .We show evidence that the refractive index dependence on optical intensity is strongly sublinear, indicating that a substantial degree of saturation occurs at intensity levels of iO W/cm2. We discuss the origin of this saturation and its implications on the design of future devices.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert Kuszelewicz, Robert Kuszelewicz, Bruno Sfez, Bruno Sfez, Jean-Louis Oudar, Jean-Louis Oudar, J. C. Michel, J. C. Michel, Rozette Azoulay, Rozette Azoulay, } "All-optical switching and bistability in GaAs-based epitaxial structures", Proc. SPIE 1280, High Speed Phenomena in Photonic Materials and Optical Bistability, (1 August 1990); doi: 10.1117/12.20659; https://doi.org/10.1117/12.20659
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