Carrier lifetime control in III-V multiple quantum wells

Michael Lynch; John Hegarty; A. Ginty; William M. Kelly

doi:10.1117/12.20642

1 August 1990 Carrier lifetime control in III-V multiple quantum wells

Michael Lynch, John Hegarty, A. Ginty, William M. Kelly

Proceedings Volume 1280, High Speed Phenomena in Photonic Materials and Optical Bistability; (1990) https://doi.org/10.1117/12.20642
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands

Abstract

We report carrier lifetime reduction in GaInAs/InP multiple quantum wells from 3Ons to 95ps using mesas with ion implantation of the sidewalls.

Citation Download Citation

Michael Lynch, John Hegarty, A. Ginty, and William M. Kelly "Carrier lifetime control in III-V multiple quantum wells", Proc. SPIE 1280, High Speed Phenomena in Photonic Materials and Optical Bistability, (1 August 1990); https://doi.org/10.1117/12.20642

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