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1 August 1990 Carrier lifetime control in III-V multiple quantum wells
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Proceedings Volume 1280, High Speed Phenomena in Photonic Materials and Optical Bistability; (1990) https://doi.org/10.1117/12.20642
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands
Abstract
We report carrier lifetime reduction in GaInAs/InP multiple quantum wells from 3Ons to 95ps using mesas with ion implantation of the sidewalls.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Lynch, John Hegarty, A. Ginty, and William M. Kelly "Carrier lifetime control in III-V multiple quantum wells", Proc. SPIE 1280, High Speed Phenomena in Photonic Materials and Optical Bistability, (1 August 1990); https://doi.org/10.1117/12.20642
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