1 August 1990 Electric field dependence of optical properties of a double quantum well: experiment and applications
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Proceedings Volume 1280, High Speed Phenomena in Photonic Materials and Optical Bistability; (1990) https://doi.org/10.1117/12.20650
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands
Abstract
In the present work, we report the systematic observation of the optical blue shift induced by electric field in a GaAs/GaAIAs double-well system as far as 18 meV at room temperature. To this end, a detailed electroreflectance study of a GaAs-Alo.3 Gao.7 As double quantum well structure was carried out at room temperature. This effect occurs at moderate values ofthe applied field. In addition, a computer modeling of the electric field dependent optical properties is presented, which is based upon a variational calculation, in the frame of the effective mass approximation. The calculated spectra agree with the expefimental results. The model was used to engineer a coupled QW structure, which optimises the achievable modulation depth, due to application of an electric field.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Domenico Campi, Domenico Campi, C. Cacciatore, C. Cacciatore, Claudio Coriasso, Claudio Coriasso, C. Villavecchia, C. Villavecchia, Claude L. Alibert, Claude L. Alibert, } "Electric field dependence of optical properties of a double quantum well: experiment and applications", Proc. SPIE 1280, High Speed Phenomena in Photonic Materials and Optical Bistability, (1 August 1990); doi: 10.1117/12.20650; https://doi.org/10.1117/12.20650
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