MQW p-i-n heterostructure electro-optical characteristics in the region of allowed and "forbidden" transitions in quantum wells

Polievet I. Perov; A. V. Chomich; L. A. Avdeeva; B. K. Medvedev; V. B. Mokerov

doi:10.1117/12.20673

1 August 1990 MQW p-i-n heterostructure electro-optical characteristics in the region of allowed and "forbidden" transitions in quantum wells

Polievet I. Perov, A. V. Chomich, L. A. Avdeeva, B. K. Medvedev, V. B. Mokerov

Author Affiliations +

Proceedings Volume 1280, High Speed Phenomena in Photonic Materials and Optical Bistability; (1990) https://doi.org/10.1117/12.20673
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands

Abstract

The effect of electric fields on the optical properties of GaAs-A1GaAs ultiquantu well (HQW) structures are attracting much attention due to potential applications in high-speed modulation and switching of optical signals4 The existing technology of growing GaAs-A1GaAs MQW's allows to manufacture devices which have responce required for for implementation of neutral networks and associative meffiories.

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Polievet I. Perov, A. V. Chomich, L. A. Avdeeva, B. K. Medvedev, and V. B. Mokerov "MQW p-i-n heterostructure electro-optical characteristics in the region of allowed and "forbidden" transitions in quantum wells", Proc. SPIE 1280, High Speed Phenomena in Photonic Materials and Optical Bistability, (1 August 1990); https://doi.org/10.1117/12.20673

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