1 August 1990 MQW p-i-n heterostructure electro-optical characteristics in the region of allowed and "forbidden" transitions in quantum wells
Author Affiliations +
Proceedings Volume 1280, High Speed Phenomena in Photonic Materials and Optical Bistability; (1990) https://doi.org/10.1117/12.20673
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands
Abstract
The effect of electric fields on the optical properties of GaAs-A1GaAs ultiquantu well (HQW) structures are attracting much attention due to potential applications in high-speed modulation and switching of optical signals4 The existing technology of growing GaAs-A1GaAs MQW's allows to manufacture devices which have responce required for for implementation of neutral networks and associative meffiories.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Polievet I. Perov, Polievet I. Perov, A. V. Chomich, A. V. Chomich, L. A. Avdeeva, L. A. Avdeeva, B. K. Medvedev, B. K. Medvedev, V. B. Mokerov, V. B. Mokerov, } "MQW p-i-n heterostructure electro-optical characteristics in the region of allowed and "forbidden" transitions in quantum wells", Proc. SPIE 1280, High Speed Phenomena in Photonic Materials and Optical Bistability, (1 August 1990); doi: 10.1117/12.20673; https://doi.org/10.1117/12.20673
PROCEEDINGS
3 PAGES


SHARE
Back to Top