1 August 1990 On the photoemission from 3-D quantum well boxes of nonlinear optical materials in the presence of crossed electric and magnetic fields
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Proceedings Volume 1280, High Speed Phenomena in Photonic Materials and Optical Bistability; (1990) https://doi.org/10.1117/12.20644
Event: The International Congress on Optical Science and Engineering, 1990, The Hague, Netherlands
Abstract
An attempt is made to study the photoemission :eron 3D quantum well boxes (QWBs) of nonlinear optical materials in the presence of crossed electric and magnetic fields, taking ternary chalcopyrite semiconductors as an example. Consi3ering the anisotropic crystal potential in the Harniltonian, we have formulated the generalized electron energy spectrum taking into account the anisotropies of the 0ther energy band par arne ter s, within the fr sine work of theory. We have then derlved.the photoernission from 3D QWBs of ternary chalCopyrite compounds by using the modified dispersion law under cross field configuration in the said material. It is found, taking 3D QWBs of n-CdGeAs2 as an example, that the photoernission exhibits ladder like dependence with incident photon energy as found in quanturn Hall effect and the corresponding results for three and two-band Kane models together with that of parabolic energy bands have been obtained from the present generalized exjressions as special cases. The photoeinission decreases with increasing magnetic field and decreasing electron concentration respectively. The oscillations in accordance with the present generalized model show up much more significantly and are in agreement with the experimental results as given elsewhere.
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Kamakhya Prasad Ghatak, Kamakhya Prasad Ghatak, } "On the photoemission from 3-D quantum well boxes of nonlinear optical materials in the presence of crossed electric and magnetic fields", Proc. SPIE 1280, High Speed Phenomena in Photonic Materials and Optical Bistability, (1 August 1990); doi: 10.1117/12.20644; https://doi.org/10.1117/12.20644
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