CO2-laser-driven avalanche ionization in InSb at liquid He temperatures

Michael P. Hasselbeck

doi:10.1117/12.20719

1 August 1990 CO₂-laser-driven avalanche ionization in InSb at liquid He temperatures

Michael P. Hasselbeck

Proceedings Volume 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III; (1990) https://doi.org/10.1117/12.20719
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

Using the results of previous experiments, CO2 laser induced impact ionization in InSb has been evaluated using measured dc ionization rate data. The laser field is scaled by 1/w'r, where o is the laser frequency and t is the momentum relaxation time of the hot electrons. Scaling is done to provide an ionization rate consistent with the experimental conditions. In this way, a momentum relaxation time t, 0.34 p5 can be deduced, in agreement with the value previously determined by four wave mixing experiments.

Citation Download Citation

Michael P. Hasselbeck "CO₂-laser-driven avalanche ionization in InSb at liquid He temperatures", Proc. SPIE 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, (1 August 1990); https://doi.org/10.1117/12.20719

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available