1 August 1990 CO2-laser-driven avalanche ionization in InSb at liquid He temperatures
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Proceedings Volume 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III; (1990) https://doi.org/10.1117/12.20719
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
Using the results of previous experiments, CO2 laser induced impact ionization in InSb has been evaluated using measured dc ionization rate data. The laser field is scaled by 1/w'r, where o is the laser frequency and t is the momentum relaxation time of the hot electrons. Scaling is done to provide an ionization rate consistent with the experimental conditions. In this way, a momentum relaxation time t, 0.34 p5 can be deduced, in agreement with the value previously determined by four wave mixing experiments.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael P. Hasselbeck, "CO2-laser-driven avalanche ionization in InSb at liquid He temperatures", Proc. SPIE 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, (1 August 1990); doi: 10.1117/12.20719; https://doi.org/10.1117/12.20719
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