1 August 1990 Correlation of hot carrier and hot phonon effects in semiconductors on a picosecond time scale
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Proceedings Volume 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III; (1990) https://doi.org/10.1117/12.20701
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
Through simultaneous analysis of picosecond, time-resolved reflectivity and Raman scattering data we have been able to self-consistently relate hot carrier and hot phonon kinetics in bulk, crystalline Germanium. We show that hot carrier diffusion and electron-hole interactions are essential to achieving a quantitative correlation.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Henry M. van Driel, Henry M. van Driel, Andreas Othonos, Andreas Othonos, Jeffrey F. Young, Jeffrey F. Young, Paul J. Kelly, Paul J. Kelly, } "Correlation of hot carrier and hot phonon effects in semiconductors on a picosecond time scale", Proc. SPIE 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, (1 August 1990); doi: 10.1117/12.20701; https://doi.org/10.1117/12.20701
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