Determination of the intervalley X6 --> Gamma6, L6 scattering time and the density of states effective mass of the X7 band in GaAs by picosecond time-resolved absorption spectroscopy

Wubao B. Wang; Nathan Ockman; Michael A. Cavicchia; Ming Yan; Robert R. Alfano

doi:10.1117/12.20710

1 August 1990 Determination of the intervalley X₆ --> Gamma₆, L₆ scattering time and the density of states effective mass of the X₇ band in GaAs by picosecond time-resolved absorption spectroscopy

Wubao B. Wang, Nathan Ockman, Michael A. Cavicchia, Ming Yan, Robert R. Alfano

Author Affiliations +

Proceedings Volume 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III; (1990) https://doi.org/10.1117/12.20710
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

The dynamics of electrons in the X 6 valley for a GaAs crystal was measured by time-resolved absorption spectroscopy. An infrared picosecond probe pulse was used to monitor the growth and decay of the population in the X o valley subsequent to excitation by a 527 nm pump pulse. The intervalley X , F 6' L 6 scattering time was determined from the time evolution of electrons in the x 6 valley to be 700 500 fs by a rate equation analysis. The X 6-X absorption spectrum of GaAs was obtained by the time-resolved pump-JR-probe technique by varying the probe wavelength from 2.16 m to 3.9 m. It gives the energy gap between the minima of the X and X bands to be 0.345 eV, and the density of states effective mass for the X band to be 0.48 m

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Wubao B. Wang, Nathan Ockman, Michael A. Cavicchia, Ming Yan, and Robert R. Alfano "Determination of the intervalley X₆ --> Gamma₆, L₆ scattering time and the density of states effective mass of the X₇ band in GaAs by picosecond time-resolved absorption spectroscopy", Proc. SPIE 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, (1 August 1990); https://doi.org/10.1117/12.20710

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