1 August 1990 Direct measurement of ultrafast carrier processes in optical probing of GaInAs-type narrow band gap semiconductors
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Proceedings Volume 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III; (1990) https://doi.org/10.1117/12.20715
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
The relaxation time of hot carriers in bulk Ga47In053As has been measured as a function of excitation energy near and above the conduction band minimum, and as a function of carrier density. The carrier relaxation rate increases dramatically with excess energy, due to the additional energy decay provided by the LO phonons. As a function of carrier density, the scattering rate is maximum at densities below 1018 cm3, but decreases for higher carrier concentrations, falling roughly by half at 1019 cm3.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Clifford R. Pollock, Clifford R. Pollock, Brian J. Zook, Brian J. Zook, David Cohen, David Cohen, Alphan Sennaroglu, Alphan Sennaroglu, } "Direct measurement of ultrafast carrier processes in optical probing of GaInAs-type narrow band gap semiconductors", Proc. SPIE 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, (1 August 1990); doi: 10.1117/12.20715; https://doi.org/10.1117/12.20715
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