1 August 1990 Effect of hot phonons on the ultrafast relaxation of holes in GaAs
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Proceedings Volume 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III; (1990) https://doi.org/10.1117/12.20703
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
The ultrafast relaxation of electron-hole plasma photoexcited by a subpicosecond laser pulse in GaAs is investigated using ont Carlo method. The photoexcited carrier concentration is assumed to be 5x10 cm , and thephoton energy is assumed to 1.82 eV. The interaction between the heavy-holes and hot LO phonons has a minor effect on the cooling rates and the shape of hot phonon distribution but leads to an increased energy loss rates through the deformation potential interaction to compensate for the energy gained via LO phonon absorption.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mohamed A. Osman and Marc M. Cahay "Effect of hot phonons on the ultrafast relaxation of holes in GaAs", Proc. SPIE 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, (1 August 1990); doi: 10.1117/12.20703; https://doi.org/10.1117/12.20703
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