1 August 1990 Electron-hole plasma thermalization in the GaAs/AlGaAs system: bulk, quantum wells, and superlattices
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Proceedings Volume 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III; (1990) https://doi.org/10.1117/12.20714
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
We present experimental results for the thermalization of hot electron-hole plasma in bulk GaAs, AlGa1_As, GaAs/A1GaAs quantum wells and GaAs/AlAs superlattices. The results are compared with calculations of the thermalization of an electron-hole plasma with the lattice, taking into account different electron and hole temperatures and a nonequilibnum of the optical phonons. Several different situations are simulated: Cooling as a function of the excitation density and the excess photon energy, cooling in doped samples, and heating of a laser-excited plasma to an elevated lattice temperature. The qualitative agreement with our experimental results is generally good. However, experimentally observed reductions of the energy transfer rate seem to be larger than theory predicts.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Karl Leo, Wolfgang W. Ruehle, Elisabeth Bauser, Klaus H. Ploog, "Electron-hole plasma thermalization in the GaAs/AlGaAs system: bulk, quantum wells, and superlattices", Proc. SPIE 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, (1 August 1990); doi: 10.1117/12.20714; https://doi.org/10.1117/12.20714
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