1 August 1990 Femtosecond investigations of optical switching and χ(3) in GaAs waveguides
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Proceedings Volume 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III; (1990) https://doi.org/10.1117/12.20707
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
We describe a new technique for performing femtosecond transient measurements of nonlinear index and absorption in waveguide devices. Using a time division interferometry technique in conjunction with a tunable femtosecond laser source we have performed the first measurement of the wavelength dependent nonresonant nonlinear index in A1GaAs. Contributions to nonlinear index arise from both virtual as well as real population mediated processes depending on the wavelength detuning from resonance. Complementary pump-probe measurements of transient absorption provide information on excited state population as well as two-photon induced absorption processes. These measurements provide imformation on the mechanism and dynamics of fundamental nonlinear optical processes below the band edge in semiconductors and are relevant to possible all optical switching applications in waveguide devices.
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Michael J. LaGasse, Michael J. LaGasse, Kristin K. Anderson, Kristin K. Anderson, Christine A. Wang, Christine A. Wang, Hermann A. Haus, Hermann A. Haus, James G. Fujimoto, James G. Fujimoto, } "Femtosecond investigations of optical switching and χ(3) in GaAs waveguides", Proc. SPIE 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, (1 August 1990); doi: 10.1117/12.20707; https://doi.org/10.1117/12.20707
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