1 August 1990 Nonequilibrium phonon effects on the transient expansion of photogenerated electron-hole plasmas
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Proceedings Volume 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III; (1990) https://doi.org/10.1117/12.20704
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
The transient expansion process of a photogenerated electron-hole plasma is examined using Ensemble Monte Carlo techniques. The effect of nonequilibrium phonons on the expansion behaviour is included for the first time. Both the spatial and temporal variations of the phonon population are taken into account. Numerical results over the picosecond time scale demonstrate that the nonequilibrium phonons significantly enhance the plasma expansion and alter the spatial carrier distribution profiles.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ravindra P. Joshi, Kong-Thon F. Tsen, David K. Ferry, "Nonequilibrium phonon effects on the transient expansion of photogenerated electron-hole plasmas", Proc. SPIE 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, (1 August 1990); doi: 10.1117/12.20704; https://doi.org/10.1117/12.20704
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