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1 August 1990 Picosecond nonlinear optical characterization of GaAs at lamda=1.064 μm
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Proceedings Volume 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III; (1990) https://doi.org/10.1117/12.20705
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
We have characterized through degenerate four wave mixing (DFWM) the nonlinear optical response of bulk GaAs at =1.O64 tim. At the lower intensities, for the compensated samples, the reflectivity is accounted by a 3rd order nonlinearity, mainly due to free carrier generation, with an effective x3 at 30 P5 of 2-3x1 0b0 esu and a decay time ≤ l ns. From high intensity data we derive for all samples a two photon absorption coefficient f310 cm/GW , in agreement with the most recent reported values.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Antoniangelo Agnesi, Gian Piero Banfi, Mauro M. Costa, Martina Ghigliazza, and Giancarlo C. Reali "Picosecond nonlinear optical characterization of GaAs at lamda=1.064 μm", Proc. SPIE 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, (1 August 1990); https://doi.org/10.1117/12.20705
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