1 August 1990 Ultrafast laser probe of interband absorption edges in 3-D and 2-D semiconductors
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Proceedings Volume 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III; (1990) https://doi.org/10.1117/12.20713
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
The wavelength of ultrafast laser probes near the fundamental (E0) absorption edge falls in the infrared and visible wavelengths in most diamond and zincblende structure semiconductors. Consequently the time-resolved reflectivity and transmission in a photo-excited sample are influenced by numerous factors: Drude reflectivity and free carrier absorption, in addition to interband saturation and band gap renormalization. In this work we demonstrate the utility of probing the higher (E1 and E2) absorption edges using two-photon absorption spectroscopy or ultraviolet wavelength probes. 1) In silicon we probe the E2 absorption edge by direct two-photon absorption using visible femtosecond pulses above the indirect edge. Longer pulses melt the sample before reaching peak intensities at which two-photon absorption becomes dominant. We extract the direct two-photon absorption coefficient over a wide spectral range, and distinguish other nonlinear absorption channels, and relate these results to the band structure of silicon. 2) Using an ultraviolet probe with visible pump, Drude effects and interband saturation become negligible, leaving renormalization of the E1 and E2 edges as the dominant influence on the probe. Time-resolved experiments compare the renormalization induced by hot carriers, cold carriers and lattice heating in 3D and 2D semiconductors.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael C. Downer, Michael C. Downer, David H. Reitze, David H. Reitze, Glenn Focht, Glenn Focht, } "Ultrafast laser probe of interband absorption edges in 3-D and 2-D semiconductors", Proc. SPIE 1282, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, (1 August 1990); doi: 10.1117/12.20713; https://doi.org/10.1117/12.20713
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