1 October 1990 Anomalies in the resonant magnetopolaron region for confined impurities in multiple quantum-well structures
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Proceedings Volume 1283, Quantum Well and Superlattice Physics III; (1990) https://doi.org/10.1117/12.20753
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
Far infrared photothermal ionization spectroscopy of well-center doped shallow donors in GaAs/AlCaAs'multiple-quantum-well structures has been carried out to investigate the electron - optical-phonon interaction. The ls-2p(m=+1) and ls-3p(m=-i-1). transitions are tuned through the resonant region with the GaAs optical phonons by magnetic fields up to 23 .5T . Both two -level and three -level resonance measurements show similar anti-level-crossing behavior with extremely large interaction gaps. The lower branches are well below (-50 cm ) the resonant energies involving the bulk zone centr LO phonons. These anomalous features strongly suggest that electrons in the wells interact with phonon modes at several different frequencies, or a phonon band, in contrast to the single frequency LO phonons in the bulk. A partial explanation may be found in terms of electron - interface-phonon and electron - confined-LO-phonon interactions. Other possible mechanisms are also discussed.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jiping Cheng, Jiping Cheng, Bruce D. McCombe, Bruce D. McCombe, G. Brozak, G. Brozak, John D. Ralston, John D. Ralston, Gary W. Wicks, Gary W. Wicks, } "Anomalies in the resonant magnetopolaron region for confined impurities in multiple quantum-well structures", Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20753; https://doi.org/10.1117/12.20753
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