1 October 1990 Electric and magnetic field study of spacer layer thickness effects in A1GaAs/InGaAs resonant tunneling diodes
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Proceedings Volume 1283, Quantum Well and Superlattice Physics III; (1990) https://doi.org/10.1117/12.20727
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
Pseudomorphic Al 35Ga 65As/In 1Ga 9As resonant tunneling diodes fabricated with asymmetric spacer layers adjaceht to the tunnel barrier were characterized via magneto-transport measurements. Novel tunneling effects (ground vs excited state tunneling) were observed in the current-voltage characteristics of these devices which depend upon the bias direction. Shubnikov-de Haas oscillations obtained at high magnetic fields show a strong asymmetry with bias direction and give evidence of silicon dopant out diffusion during molecular beam epitaxy.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hyungmo Yoo, Stephen M. Goodnick, John R. Arthur, "Electric and magnetic field study of spacer layer thickness effects in A1GaAs/InGaAs resonant tunneling diodes", Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20727; https://doi.org/10.1117/12.20727
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