1 October 1990 Electric and magnetic field study of spacer layer thickness effects in A1GaAs/InGaAs resonant tunneling diodes
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Proceedings Volume 1283, Quantum Well and Superlattice Physics III; (1990) https://doi.org/10.1117/12.20727
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
Pseudomorphic Al 35Ga 65As/In 1Ga 9As resonant tunneling diodes fabricated with asymmetric spacer layers adjaceht to the tunnel barrier were characterized via magneto-transport measurements. Novel tunneling effects (ground vs excited state tunneling) were observed in the current-voltage characteristics of these devices which depend upon the bias direction. Shubnikov-de Haas oscillations obtained at high magnetic fields show a strong asymmetry with bias direction and give evidence of silicon dopant out diffusion during molecular beam epitaxy.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hyungmo Yoo, Hyungmo Yoo, Stephen M. Goodnick, Stephen M. Goodnick, John R. Arthur, John R. Arthur, } "Electric and magnetic field study of spacer layer thickness effects in A1GaAs/InGaAs resonant tunneling diodes", Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20727; https://doi.org/10.1117/12.20727
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