1 October 1990 Electronic structure and optical properties of strained-layer superlattices
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Proceedings Volume 1283, Quantum Well and Superlattice Physics III; (1990) https://doi.org/10.1117/12.20747
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
The essential elements of strain effects on the electronic structure of lnGa1As-(AlGa)As on GaAs are elucidated. Attention is focused on the optical properties of quantum wells and superlattices(SL) with In fractions <0.12. Photoluminescence and photoluminescence excitation spectroscopy at '-4K has revealed sharp exciton features and allowed us to measure the el-hhl binding energy versus well width, identify Ln =0 and transitions and follow the development of SL minibands. Comparison with envelope function calculations suggests the band offset ratio remains constant (67:33) up to x=O.12.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Geoffrey Duggan, Geoffrey Duggan, } "Electronic structure and optical properties of strained-layer superlattices", Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20747; https://doi.org/10.1117/12.20747
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