1 October 1990 Gain and strong-signal saturation of photoexcited quantum-well structures
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Proceedings Volume 1283, Quantum Well and Superlattice Physics III; (1990) https://doi.org/10.1117/12.20760
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
The stimulated emission spectra of photoexcited quantum-well structures were measured at room temperature, 77 and 1.8K as a function of the illuminated stripe length and excitation intensity. Three samples are examined: a multiple quantum well, and two superlattices (one of them is type-Il). Based on these data, the gain spectra and gain saturation behavior were obtained using Agrawal's model for the analysis. Both the spontaneous photoluminescence spectra and the stimulated emission spectra are used in order to analyze the spectral shifts. Kronig-Penney model was used to approximate the energy level diagram of our samples.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yair Dankner, Yair Dankner, Elieser Finkman, Elieser Finkman, Arza Ron, Arza Ron, Elisha Cohen, Elisha Cohen, Maria C. Tamargo, Maria C. Tamargo, Michael D. Sturge, Michael D. Sturge, } "Gain and strong-signal saturation of photoexcited quantum-well structures", Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20760; https://doi.org/10.1117/12.20760
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