1 October 1990 Influences of resonantly accumulated free electrons on optical absorption and emission in biased double-barrier resonant tunnelling structures
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Proceedings Volume 1283, Quantum Well and Superlattice Physics III; (1990) https://doi.org/10.1117/12.20756
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
The photoluminescence (PL) and photoluminescence excitation (PLE) spectra of a GaAs/AlGaAs doublebarrier resonant tunnelling diode have been studied with sub-meV resolution as a function of the applied bias voltage. For voltages which bias the device in the resonant tunnelling regime, a monotonic blue shift of the PLE peak is observed, concomitant with a monotonic red shift of the corresponding PL peak. Over the same range of voltages, the linewidth (FWHM) increases from 4.8 to 6.3 meV in the case of the PL and from 3.6 to 8.7 meV in the case of the PLE. These results are interpreted as representing the influence of the resonantly accumulated electron population in the well region on the heavy hole exciton resonance.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Sylvain Charbonneau, Jeffrey F. Young, Pawel Hawrylak, Anthony J. SpringThorpe, "Influences of resonantly accumulated free electrons on optical absorption and emission in biased double-barrier resonant tunnelling structures", Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20756; https://doi.org/10.1117/12.20756
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