1 October 1990 Intersubband relaxation of hot carriers in coupled quantum wells
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Proceedings Volume 1283, Quantum Well and Superlattice Physics III; (1990) https://doi.org/10.1117/12.20743
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
We use an ensemble Monte Carlo simulation of coupled electrons, holes and polar optical phonons in multiple quantum well systems to model the intersubband relaxation of hot carriers measured in ultra-fast optical experiments. Our simulated results are in good agreement with experimental results in modulation doped quantum wells and coupled double well structures where we find that the intersubband relaxation time is controlled by the spatial overlap of the subband envel ope wavefuncti ons.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stephen M. Goodnick, Stephen M. Goodnick, Jenifer E. Lary, Jenifer E. Lary, Paolo Lugli, Paolo Lugli, } "Intersubband relaxation of hot carriers in coupled quantum wells", Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20743; https://doi.org/10.1117/12.20743

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