1 October 1990 Investigation of LP-MOCVD-grown GaAs-GaInP multiquantum wells by reflectance anistropy
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Proceedings Volume 1283, Quantum Well and Superlattice Physics III; (1990) https://doi.org/10.1117/12.20730
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
High-quality GaAs-GalnP heterojunctions, quantum wells and superlattices have been grown using low-pressure metalorganic chemical vapo deposition. We showed using photoluminescence that the growth rate of the thin layers can not be extrapolated from the thick layer growth rate. In situ reflectance anisotropy (RA) measurements were used to monitor the growth. Correlations were made between the RA signals and film quality. RA signals were also measured for GaAs quantum wells of various thickness, as well as f superlattice growth.
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Manijeh Razeghi, Manijeh Razeghi, A. Machado, A. Machado, S. Koch, S. Koch, O. Acher, O. Acher, Franck Omnes, Franck Omnes, Martin Defour, Martin Defour, "Investigation of LP-MOCVD-grown GaAs-GaInP multiquantum wells by reflectance anistropy", Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20730; https://doi.org/10.1117/12.20730
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