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1 October 1990 Long-wavelength GaAs quantum-well IR detectors: low-temperature performance characteristics
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Proceedings Volume 1283, Quantum Well and Superlattice Physics III; (1990) https://doi.org/10.1117/12.20733
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
We have fabricated and characterized several GaAs/AlGaAs multiquantum well infrared detectors at temperatures ranging from 6 K to 77 K. The detectors were designed to have a single bound state in the quantum well and the first excited state in the continuum above the AIGaAs conduction band edge. The difference in energy between the two levels, as determined by the quantum well width and aluminum mole fraction in the barrier, was chosen such that absorption would occur in the 8-14 tm wavelength region. Each detector was characterized by FTIR absorption, dark current, responsivity, spectral noise density, and thermal activation energy measurements. The -maximum observed detectivity is 1 .8 x 1 012 cmIHz/W at ?= 8.3 jim and 6 K.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mary Rosenbluth, Michael J. O'Loughlin, Walter L. Bloss, Frank C. De Lucia, Helmut Kanter, Bruce Kenneth Janousek, Elaine Perry, and Michael J. Daugherty "Long-wavelength GaAs quantum-well IR detectors: low-temperature performance characteristics", Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); https://doi.org/10.1117/12.20733
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