1 October 1990 Novel InAs/GaSb/AlSb tunnel structures
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Proceedings Volume 1283, Quantum Well and Superlattice Physics III; (1990) https://doi.org/10.1117/12.20765
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
The nearly lattice-matched InAs/GaSb/A1Sb system offers tremendous flexibility in designing novel heterostructures due to its wide range of band alignments. We have recently exploited this advantage to demonstrate a new class of negative differential resistance (NDR) devices based on interband tunneling. We have also studied "traditional" double barrier (resonant) and single barrier NDR tunnel structures in the InAs/GaSb/AlSb system. Several of the interband and resonant tunneling structures display excellent peak current densities (as high as 4 x 1O A/cm2 ) and/or peak-to-valley current ratios (as high as 20:1 and 88:1 at 300 K and 77 K, respectively), offering great promise for high frequency and logic applications.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David H. Chow, David H. Chow, Jan Soederstroem, Jan Soederstroem, D. A. Collins, D. A. Collins, David Z.Y. Ting, David Z.Y. Ting, Edward T. Yu, Edward T. Yu, Thomas C. McGill, Thomas C. McGill, "Novel InAs/GaSb/AlSb tunnel structures", Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20765; https://doi.org/10.1117/12.20765
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