1 October 1990 Optical detection of resonant tunneling in GaAs/AlAs superlattices
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Proceedings Volume 1283, Quantum Well and Superlattice Physics III; (1990) https://doi.org/10.1117/12.20723
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Recent experimental results on the physics of coherent and incoherent resonant tunneling in superlattices with an electric field perpendicular to the layers are discussed. For the case of weak coupling between the wells, we observe a decrease of the time constant for electron transport if different subbands of adjacent wells are at resonance. In this case) transport is incoherent and sequential. This leads to an efficient population of higher conduction subbands by non-thermal carriers which can be probed by photoluminescence experiments. For the case of strong inter-well coupling, on the other hand, coherence gives rise to resonance-induced delocalization phenomena which have been studied by photocurrent spectroscopy.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harald Schneider, Harald Schneider, Holger T. Grahn, Holger T. Grahn, K. V. Klitzing, K. V. Klitzing, Klaus H. Ploog, Klaus H. Ploog, } "Optical detection of resonant tunneling in GaAs/AlAs superlattices", Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20723; https://doi.org/10.1117/12.20723

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