Optoelectronic properties of Si/Ge superlattices

Michael A. Gell

doi:10.1117/12.20757

1 October 1990 Optoelectronic properties of Si/Ge superlattices

Michael A. Gell

Proceedings Volume 1283, Quantum Well and Superlattice Physics III; (1990) https://doi.org/10.1117/12.20757
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

Theoretical predictions of electronic and optical properties of short period Si/Ge superlattices are presented. Attention is focused on critical point structure and the effects of the superlattice compositional modulation and the buffer on band edge absorption. The band edge absorption is the main distinguishing feature of the different superlattice configurations. The construction conditions for direct-gap Si/Ge superlattices are specified. Theoretical results are discussed in relation to recent experimental work.

Citation Download Citation

Michael A. Gell "Optoelectronic properties of Si/Ge superlattices", Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); https://doi.org/10.1117/12.20757

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