1 October 1990 Photoluminescence analysis of ultrathin quantum wells
Author Affiliations +
Proceedings Volume 1283, Quantum Well and Superlattice Physics III; (1990) https://doi.org/10.1117/12.20749
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Three types of ultrathin single quantum well structure grown by MBE , GaAs/InAs/GaAs (type I), GaAs/GaSb/GaAs (typell , staggered) and GaSb/InAs/GaSb (type II , misaligned) have been studied by photolusinescence (PL) measurements to understand the band alignment and effects of lattice strain at the interface. Observed PL spectra are discussed in conjunction with the interface structure probed by RHEED analysis during the MBE growth. The well width dependence of PL energy is cospared with the theoretical results based on a finite potential well model.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mitsuaki Yano, Mitsuaki Yano, Takanori Iwawaki, Takanori Iwawaki, Hisakazu Yokose, Hisakazu Yokose, Akihiko Kawaguchi, Akihiko Kawaguchi, Yoshio Iwai, Yoshio Iwai, Masataka Inoue, Masataka Inoue, } "Photoluminescence analysis of ultrathin quantum wells", Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20749; https://doi.org/10.1117/12.20749

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