1 October 1990 Studies of electronic structures of GaAs/AlAs superlattices by photoluminescence under hydrostatic pressure
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Proceedings Volume 1283, Quantum Well and Superlattice Physics III; (1990) https://doi.org/10.1117/12.20761
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
The samples of (GaAs) (AlAs) superlattices (SLs) were grown by MIBE method on (001)-oriented semi-thsulathg GaAs substrates. The photoluminescence (PL) was measured at 77 K and under hydrostatic pressure in the range of 0- 30 Kbar. The dependence of the energy separation between conduction band Flike and X- like levels on n values was obtained from the measured results. The transition from type I to type II was observed at atmosphere in a SL of n = 1 1. It is in good agreement with the calculated result based on Kronig-Penney model. It is found that the pressure coefficient of X-like states decreases with decreasing the n values. And it is explained by a combined effects. The pressure dependence of the levels and luminescence intensities demonstrates that F-X mixing is quite weak.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhao-Ping Wang, Guohua Li, De Sheng Jiang, He Xiang Han, and Klaus H. Ploog "Studies of electronic structures of GaAs/AlAs superlattices by photoluminescence under hydrostatic pressure", Proc. SPIE 1283, Quantum Well and Superlattice Physics III, (1 October 1990); doi: 10.1117/12.20761; https://doi.org/10.1117/12.20761
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